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| VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 50 30 100 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 30N60 30N60A 2.5 3.0 V V A mA nA V V Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) 1996 IXYS All rights reserved 91512E (3/96) IXGH 30N60 IXGM 30N60 IXGH 30N60A IXGM 30N60A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 16 2800 VCE = 25 V, VGE = 0 V, f = 1 MHz 230 70 150 IC = IC90 , VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 33 Switching times may increase for VCE (Clamp) > 0.8 * V CES, 30N60A higher TJ or increased RG 30N60A Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = R off = 33 35 60 100 200 500 200 2 100 200 3 600 500 250 5.5 4.0 1000 1500 800 180 50 90 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.62 K/W 0.25 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 30N60 Remarks: Switching times 30N60A may increase for VCE (Clamp) > 0.8 * VCES , higher 30N60 30N60A TJ or increased RG IXGH 30N60 and IXGH 30N60A characteristic curves are located on the IXGH 30N60U1 and IXGH 30N60AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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